Parameter Extraction and Analysis of Pentacene Thin Film Transistor with Different Insulators

This paper presents both analytical modeling and simulations based on finite element method of Pentacene Thin Film Transistors or Organic Thin Film transistors (PTFTs/OTFTs). Analytical modeling approach is introduced by using conventional transistor equations and finite element method using ATLAS two dimensional numerical device simulators. Both the methods shows a good agreement of output characteristic and parameters with experimental results. Further simulation is performed for top contact OTFT devices with different insulator materials while pentacene is used as organic semiconductor (OSC) material. A large variation has been observed for different insulators which insight the importance for right selection of the material during fabrication. It has been observed that the best results can be obtained for Hafnium oxide (HfO2) due to highest dielectric constant. Parameters such as current on-off ratio drain current and transconductance shows a variation of 85% or more for different insulators. However, a minor change is achieved for mobility analysis. This analysis clarifies a number of issues that can help in design and fabrication of devices on flexible substrates. The simulated results are demonstrated in terms of performance parameters such as output and transfer characteristics, drain current, mobility, threshold voltage, ION/ IOFF and transconductance.